Spin–orbit coupling in bulk GaAs
نویسندگان
چکیده
منابع مشابه
Spin-orbit coupling in bulk GaAs
We study the spin-orbit coupling in the whole Brillouin zone for GaAs using both the spsd and sps nearest-neighbor tight-binding models. In the Γ-valley, the spin splitting obtained is in good agreement with experimental data. We then further explicitly present the coefficients of the spin splitting in GaAs L and X valleys. These results are important to the realization of spintronic device and...
متن کاملComparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities
Wide bandgap semiconductors are attractive candidates for polariton-based devices operating at room temperature. We present numerical simulations of reflectivity, transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compare the particularities of the strong coupling regime in each system. Indeed the intrinsic properties of the excitons in these materials resu...
متن کاملElectron mobilities approaching bulk limits in "surface-free" GaAs nanowires.
Achieving bulk-like charge carrier mobilities in semiconductor nanowires is a major challenge facing the development of nanowire-based electronic devices. Here we demonstrate that engineering the GaAs nanowire surface by overcoating with optimized AlGaAs shells is an effective means of obtaining exceptionally high carrier mobilities and lifetimes. We performed measurements of GaAs/AlGaAs core-s...
متن کاملHIGH FREQUENCY OPTICAL RECTIFICATION IN BULK GaAs AND ASYMMETRIC AlGaAs/GaAs QUANTUM WELLS
The mechanism of the huge optical recti cation (OR) in asymmetrical quantum wells (AQW) has been investigated at high frequencies (HF) obtained by short far infrared pulses generated by a free electron laser. The HF coupling into the fundamental mode of the traveling wave transmission line is tested using the bulk OR in GaAs. Whereas the observed signal clearly demonstrates the principle of our...
متن کاملDynamics of electric field screening in a bulk GaAs modulator.
The transient development of electric-field distributions in a biased GaAs film after low density optical excitation is determined by measurements of Franz-Keldysh modulations with a time resolution of 100 fs. The experimental results are compared with theoretical calculations. The transient field is calculated with a drift-diffusion model. Our calculation of the dielectric function of GaAs inc...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physica E: Low-dimensional Systems and Nanostructures
سال: 2008
ISSN: 1386-9477
DOI: 10.1016/j.physe.2008.02.006